The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 07, 2003

Filed:

May. 01, 2001
Applicant:
Inventors:

Hongyu Wang, Niskayuna, NY (US);

Krishan Lal Luthra, Schenectady, NY (US);

Assignee:

General Electric Company, Niskayuna, NY (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 1/416 ;
U.S. Cl.
CPC ...
C23C 1/416 ;
Abstract

A method of forming an article. The method comprises forming a silicon-based substrate that is oxidizable by reaction with an oxidant to form at least one gaseous product and applying an intermediate layer/coating onto the substrate, wherein the intermediate layer/coating is oxidizable to a nongaseous product by reaction with the oxidant in preference to reaction of the silicon-containing substrate with the oxidant.


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