The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 07, 2003
Filed:
Jun. 30, 2000
Applicant:
Inventor:
Nagakazu Furuya, Kofu-shi, Yamanashi 400-0024, JP;
Assignee:
Other;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01B 1/06 ; H01C 1/04 ;
U.S. Cl.
CPC ...
H01B 1/06 ; H01C 1/04 ;
Abstract
A process for producing a reaction layer material or gas feed layer material for a gas diffusion electrode, which comprises the steps of: dispersing a gas diffusion electrode raw material excluding polytetrafluoroethylene in to an organic solvent to prepare a dispersion; adding polytetrafluoroethylene to the dispersion to prepare a mixture; and mixing the mixture. In the process, polytetrafluoroethylene is added in the form of dispersion or fine powder.