The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 30, 2003
Filed:
Apr. 11, 2000
Zhiliang Julian Chen, Plano, TX (US);
Thomas A. Vrotsos, Richardson, TX (US);
E. Ajith Amerasekera, Plano, TX (US);
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
The invention comprises a system and method for providing electrostatic discharge protection. In one embodiment of the invention, an integrated circuit ( ) comprising at least one input element ( ) is protected by a protective circuit ( ). The protective circuit ( ) is operable to protect the integrated circuit ( ) from damage due to electrostatic discharge and may be coupled to the input element ( ). The protective circuit ( ) comprises a lateral NPN transistor (T ) coupled to the input element ( ) and operable to activate when the input element voltage exceeds threshold, the threshold greater than or equal to the ordinary operating voltage of circuitry coupled to the input element ( ). The protective circuit ( ) also may comprise a lateral PNP transistor (T ) coupled to the input element ( ) and to the lateral NPN transistor (T ). The lateral PNP transistor (T ) is operable to aid in raising a potential of the base of the lateral NPN transistor (T ). Alternatively, the protective circuit ( ) also may use a PMOS traisistor (P ), or a PMOS transistor (P ) in combination with the lateral NPN transistor (T ), coupled to the input element ( ) and to the lateral NPN transistor (T ). The PMOS transistor (P ) is operable to aid in raising the potential of the base of the lateral NPN transistor (T ).