The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 30, 2003
Filed:
Oct. 29, 2001
Applicant:
Inventor:
Masuhide Ikeda, Nagano-ken, JP;
Assignee:
Seiko Epson Corporation, , JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G05F 1/10 ; G05F 3/02 ;
U.S. Cl.
CPC ...
G05F 1/10 ; G05F 3/02 ;
Abstract
A depletion type PMOS transistor Q and an enhancement type PMOS transistor Q are serially connected to each other between power supply lines and . A gate electrode of the PMOS transistor Q is formed from polysilicon including a P-type impurity and connected to a source electrode thereof. A gate electrode of the PMOS transistor Q is formed from polysilicon including an N-type impurity and connected to a drain electrode thereof. A voltage corresponding to a difference between a threshold voltage of the PMOS transistor Q and a threshold voltage of the PMOS transistor Q is generated at a mutually connected section of the both MOS transistors as a reference voltage.