The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 30, 2003

Filed:

Aug. 09, 2001
Applicant:
Inventors:

Kenshiro Nakashima, Aichi, JP;

Yasuo Okuyama, Aichi, JP;

Hitoshi Yokoi, Aichi, JP;

Takafumi Oshima, Aichi, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/966 ;
U.S. Cl.
CPC ...
H01L 2/966 ;
Abstract

A gas sensor having a pn junction including two discrete electrical conductive-type layers, namely, a first semiconductor layer and a second semiconductor layer, disposed in contact with each other. Ohmic electrodes are formed on the respective surfaces of the semiconductor layers. A catalytic layer containing a metallic catalytic component which dissociates hydrogen atom from a molecule having hydrogen atom is formed on one of the ohmic electrodes. The pn junction diode-type gas sensor has a simple constitution, exhibits a small change in diode characteristics with time in long-term service and is capable of detecting a gas concentration of a molecule having a hydrogen atom, for example, H , NH , H S, a hydrocarbon and the like, contained in a sample gas.


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