The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 30, 2003
Filed:
Feb. 26, 2001
Susumu Komiyama, Tokyo, JP;
Astafiev Oleg, Tokyo, JP;
Antonov Vladimir, Kanagawa, JP;
Hiroshi Hirai, Tokyo, JP;
Takeshi Kutsuwa, Tokyo, JP;
Japan Science and Technology Corporation, Kawaguchi, JP;
Abstract
An MR/FIR light detector is disclosed herein that has extraordinarily high degree of sensitivity and a high speed of response. The detector includes an MR/FIR light introducing section ( ) for guiding an incident MR/FIR light ( ), a semiconductor substrate ( ) formed with a single-electron transistor ( ) for controlling electric current passing through a semiconductor quantum dot ( ) formed therein, and a BOTAI antenna ( ) for concentrating the MW/FIR light ( ) into a small special zone of sub-micron size occupied by the semiconductor quantum dot ( ) in the single-electron transistor ( ). The quantum dot ( ) forming a two-dimensional electron system absorbs the electromagnetic wave concentrated efficiently, and retains an excitation state created therein for 10 nanoseconds or more, thus permitting electrons of as many as one millions in number or more to be transferred with respect to a single photon absorbed.