The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 30, 2003
Filed:
Jan. 17, 2001
Applicant:
Inventors:
Assignee:
Trikon Holdings Ltd., Newport, GB;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/14763 ; H01L 2/1469 ;
U.S. Cl.
CPC ...
H01L 2/14763 ; H01L 2/1469 ;
Abstract
This invention relates semiconductor devices incorporating an intermediate etch stop layer between two dielectric layers in which the dielectric constant of each of the layers is k≦3.5 and the etch stop layer has a selectivity of at least 2.5:1 relative to the upper layer. Methods and apparatus for forming nitrogen doped silicon carbide films, for example, for use as etch stop layers are described.
MacNeil, John. (2003). Methods and apparatus for forming a film on a substrate (U.S. Patent No. 6627535). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6627535
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile