The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 30, 2003
Filed:
Dec. 21, 2000
Han-Tzong Yuan, Dallas, TX (US);
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
The invention relates to an improved substrate ( ) using a layer ( ) or region ( ) of porous silicon that is created in the bulk silicon substrate material ( ) to increase the resistivity of the substrate ( ) thus making it suitable for passive component integration directly on the motherboard ( ) or chip ( ) and useful for high frequency applications due to its low loss, low dielectric properties. One or more passive components such as inductors ( ), resistors ( ) and capacitors ( ) can be integrated on the device ( ) over the porous silicon region ( ). The high resistivity of the device makes it ideal for integration on a single platform using conventional wafer fab processes since loss at radio frequencies is comparably less when compared to a pure silicon substrate.