The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 30, 2003
Filed:
Jan. 02, 2001
Kwang Chul Joo, Kyoungki-do, KR;
Byung Kwon Ahn, Seoul, KR;
Hynix Semiconductor Inc., Kyoungki-do, KR;
Abstract
The present invention discloses a method for forming a gate electrode of a flash memory. A tunnel oxide film is formed on the whole surface of a semiconductor substrate. A conductive film of a floating gate is formed over the resultant structure. A gate insulation film is formed by depositing a TaON film on the conductive film for the floating gate. A conductive film for a control gate is formed on the gates insulation film. The conductive film for the control gate, the gates insulation film, the conductive film for the floating gate and the tunnel oxide film are patterned according to a photolithography process using a gate mask, thereby forming a gate electrode. Thus, the TaON film having a high dielectric constant and a stabilized bonding structure is used as the insulation material between the floating gate and the control gate. As a result, an oxidization reactivity with the floating gate is reduced, and a thickness of an equivalent oxide film is decreased, thereby obtaining a high capacitance.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile