The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 30, 2003
Filed:
Oct. 02, 2000
Hirohiko Ohtsubo, Nagano, JP;
Tetsuro Sakurai, Chiba, JP;
Showa Denko Kabushiki Kaisha, Tokyo, JP;
Abstract
An object of the present invention is to provide a method for producing diamond and cubic boron nitride crystals having excellent mechanical strength and high regularity in particle size with high productivity, wherein seed crystals are efficiently placed in a regular pattern on a supporting plate or a raw material plate. A method for growing diamond and cubic boron nitride crystals at a pressure and temperature within the stable region of diamond or cubic boron nitride, includes stacking a supporting plate and a raw material plate, and placing a plurality of seed crystals such that the crystals come in contact with the supporting plate, placing the seed crystals in a regular pattern on the supporting plate or the raw material plate by means of placing the seed crystals on an adhesive sheet through pores formed in a regular pattern, transferring the regularly-placed seed crystals on the adhesive sheet onto the surface of the supporting plate or the raw material plate and pressing the crystals against the surface. The supporting plate or the raw material plate is used for growing the crystals.