The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 23, 2003
Filed:
Jul. 20, 1999
Joseph Reid Henrichs, Lee's Summit, MO (US);
Other;
Abstract
The present invention is a “Vertical Cavity Surface Emitting Laser” or “VCSEL” design, wherein the VCSEL device produces phase-conjugated distortion free (reversal of intracavity distortions like diffraction, divergence, and light scattering) and collimated (plane-parallel phase fronts) laser-light emissions. Moreover, through what is called intracavity degenerative four-wave mixing (called four-wave mixing because traditionally there are four frequencies of phase-matched laser light involved in the phase-conjugate process), that occurs within the nonlinear materials of the “Phase Conjugated Vertical Cavity Surface Emitting Laser” or “PCVCSEL” device's vertical-cavity. Moreover, these nonlinear materials are located at the center of the PCVCSEL's vertical-cavity, wherein wave fronts produced by the PCVCSEL's two active-area laser pumps (called Pump and Pump ) will intersect with wave fronts produced by the PCVCSEL's two active-area laser probes (called Probe and Probe ), therein causing small and large spatial interference-gratings to form, which will ultimately form what is called a “phase conjugate mirror”. Furthermore, the semiconductor materials used in the PCVCSEL's vertical-cavity design must exhibit a nonlinear property, called the “third order susceptibility”, which is necessary for the production of a “phase conjugate mirror”. In-addition, materials that exhibit nonlinear third-order susceptibilities are not limited to semiconductor materials like (GaAs) or “Gallium-Arsenide”. (InAs) or “Indium-Arsenide”, (InP) or “Indium-Phosphide”, and (GaSb) or “Gallium-Antimonide”, moreover the ternary semiconductor materials having a Cubic crystal-symmetry of class-F43 and a space-group of “216”; but are also exhibited in photo-refractive materials like (KDP) or “Potassium-Dihydrogen-Phosphate”, and (ADP) or “Ammonium-Dihydrogen-Phosphate”, moreover the photo-refractive materials having a Tetragonal crystal-symmetry of class- and a space-group of “122”. Therefore, the photo-refractive materials that also exhibit nonlinear third-order susceptibilities can also be used in the center of the PCVCSEL's vertical-cavity design for producing phase-conjugated and distortion free optical radiation emissions.
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