The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 23, 2003

Filed:

Nov. 17, 2000
Applicant:
Inventors:

Nobuyuki Ikoma, Kanagawa, JP;

Akira Ishida, Kanagawa, JP;

Shigenori Takagishi, Kanagawa, JP;

Mitsuo Takahashi, Kanagawa, JP;

Tsukuru Katsuyama, Kanagawa, JP;

Masayuki Shigematsu, Kanagawa, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01S 5/00 ; H01S 3/03 ; H01L 3/300 ;
U.S. Cl.
CPC ...
H01S 5/00 ; H01S 3/03 ; H01L 3/300 ;
Abstract

The semiconductor optical device is provided with an optical waveguide part and an optical amplification part respectively provided on the GaAs semiconductor substrate. The optical amplification part includes at least one semiconductor optical amplifier. The optical waveguide part includes optical elements including optical waveguides. The optical waveguides are optically connected to the semiconductor optical amplifier. The semiconductor optical amplifier is provided with an active layer including a Ga In N As semiconductor, a first conductive type clad layer and a second conductive type clad layer respectively with the active layer between them. The optical waveguides are respectively provided with a core semiconductor layer including at least either of a GaInNAs semiconductor or a GaAs semiconductor, a first clad semiconductor layer and a second clad semiconductor layer respectively with the core semiconductor layer between them.


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