The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 23, 2003
Filed:
Jul. 03, 2001
Applicant:
Inventors:
Assignee:
Casio Computer Co., Ltd., Tokyo, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G02F 1/136 ; H01L 2/904 ; H01L 3/1036 ; H01L 3/10376 ;
U.S. Cl.
CPC ...
G02F 1/136 ; H01L 2/904 ; H01L 3/1036 ; H01L 3/10376 ;
Abstract
According to the present invention, a channel protection film is formed a little smaller in area than the gate electrode formed of a shielding metal film. A semiconductor thin film is formed such that the thickness is set not less than 200 Å and less than 400 Å. A distance A between the edge of the gate electrode in the channel length direction and the edge of the channel protection film is set around 0.2-1.2 &mgr;m, and a distance B between the edge of the gate electrode in the channel width direction and the edge of the channel protection film is set around 1-2 &mgr;m. With this constitution, the leak current of the thin film transistor due to the light irradiation can be reduced.