The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 23, 2003
Filed:
Dec. 05, 2001
Kunihiro Kasai, Yokohama, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A semiconductor device includes a middle inter-level insulating film disposed on or above a semiconductor substrate, a conductive layer disposed on the middle inter-level insulating film, and an upper inter-level insulating film disposed on the middle inter-level insulating film and the conductive layer. The upper inter-level insulating film includes first, second, and third wiring grooves distant from each other. The second and third wiring grooves use the conductive layer as their bottoms. The side surfaces of the first, second, and third wiring grooves are covered with in-groove barrier layers. First, second, and third wiring layers are buried in the first, second, and third wiring grooves. The first, second, and third wiring layers are derived from the same wiring film, and have a thickness larger than that of the conductive layer. The second and third wiring layers are electrically connected to the conductive layer.