The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 23, 2003
Filed:
Aug. 31, 2001
Applicant:
Inventors:
Nobuyasu Kanekawa, Hitachi, JP;
Kohei Sakurai, Hitachi, JP;
Shoji Sasaki, Hitachinaka, JP;
Kenji Tabuchi, Hitachinaka, JP;
Mitsuru Watabe, Urizura, JP;
Assignee:
Hitachi, Ltd., Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/701 ; H04L 2/502 ;
U.S. Cl.
CPC ...
H01L 2/701 ; H04L 2/502 ;
Abstract
A semiconductor device comprises an embedded insulation layer formed on a semiconductor substrate plural power semiconductor elements formed on a semiconductor substrate on the embedded insulation layer, a trench formed on the semiconductor substrate and isolating between the power semiconductor elements, and an isolator insulating and driving control electrodes of the power semiconductor elements, and the power semiconductor elements such as transistors can be used, being connected each other in series.