The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 23, 2003
Filed:
May. 24, 2002
Masataka Takebuchi, Yokosuka, JP;
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Abstract
In a semiconductor device in which a non-volatile memory element and a p-channel IGFET are mounted on a single substrate, a nitride atom density of a tunnel insulating film of the non-volatile memory element is set to be higher than a nitride atom density of a gate insulating film of the p-channel IGFET. With respect to a manufacturing method, a region where the gate insulating film of the p-channel IGFET is covered by a thick buffer silicon oxide film when nitrifying the tunnel insulating film of the non-volatile memory element. The buffer silicon oxide film can be reliably removed when the gate insulating film is formed, because no nitride film is made between the substrate and the buffer silicon oxide film.