The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 23, 2003
Filed:
Oct. 22, 2002
Semiconductor device and method of manufacturing the same including drain pinned along channel width
Applicant:
Inventors:
Akiharu Miyanaga, Kanagawa, JP;
Nobuo Kubo, Kanagawa, JP;
Assignee:
Semiconductor Energy Laboratory Co., Ltd., Kanagawa-ken, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/97694 ; H01L 3/11062 ; H01L 3/1113 ; H01L 3/1119 ;
U.S. Cl.
CPC ...
H01L 2/97694 ; H01L 3/11062 ; H01L 3/1113 ; H01L 3/1119 ;
Abstract
In a semiconductor device, pining regions are disposed along the junction portion of a drain region and a channel forming region locally in a channel width direction. With this structure, because the spread of a depletion layer from a drain side is restrained by the pining regions a short-channel effect can be restrained effectively. Also, because a passage through which carriers move is ensured, high mobility can be maintained.