The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 23, 2003
Filed:
Jul. 10, 2000
Applicant:
Inventor:
Hirohisa Yamamoto, Tokyo, JP;
Assignee:
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/126 ;
U.S. Cl.
CPC ...
H01L 2/126 ;
Abstract
A wafer having an exposed portion of silicon is transferred to a treatment chamber for lamp annealing. The atmosphere of the treatment chamber is converted to a reduced pressure atmosphere (500 Torr) of an inert gas (N ). The wafer is subjected to lamp annealing in the reduced pressure atmosphere of the inert gas (1050° C., 30 seconds).