The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 6624044 B1

PDF
Full Text
Expired
Date of Patent:
Sep. 23, 2003

Filed:

May. 11, 2001
Applicant:
Inventors:

Hiroyasu Ito, Nagoya, JP;

Takafumi Arakawa, Kariya, JP;

Masatoshi Kato, Aichi-gun, JP;

Assignee:

Denso Corporation, Kariya, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/176 ;
U.S. Cl.
CPC ...
H01L 2/176 ;
Abstract

First, a trench of a semiconductor substrate is filled with a polysilicon film deposited on the surface of the semiconductor substrate. A selective thin film having etching selectivity with respect to the polysilicon film is formed on the polysilicon film. Then, the selective thin film is etched (etched back) so that a part of the selective thin film remains in a depression of the polysilicon film, as a self-aligning mask. The polysilicon film is further etched with the self-aligning mask, thereby forming a polysilicon embedded layer in the trench with a flat surface.


Find Patent Forward Citations

Ito, Hiroyasu. (2003). Method for manufacturing semiconductor device having trench filled with polysilicon (U.S. Patent No. 6624044). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6624044

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