The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 23, 2003
Filed:
Apr. 25, 2002
Kiyoshi Mori, Hyogo, JP;
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
In a fabrication method of semiconductor device, a storage node connected to one of source/drain regions of an MOS (Metal Oxide Semiconductor) transistor provided at a semiconductor substrate is formed along a trench provided through a silicon nitride film, a BPTEOS (Boro Phospho Tetra Ethyl Ortho Silicate) film and a silicon oxide film grown at low temperature. The silicon oxide film grown at low temperature is formed by either atmospheric pressure CVD (chemical vapor deposition) or plasma CVD. Also, a sidewall protection film is formed so as to prevent shorting between adjacent capacitors by growing a film at low temperature. Thus, a semiconductor device of high performance and high reliability can be provided even in a system LSI (Large Scale Integrated circuit) in which a memory circuit and logic circuit are embedded.