The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 23, 2003
Filed:
Sep. 25, 2001
Applicant:
Inventors:
Assignee:
NGK Insulators, Ltd., Nagoya, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
B32B 9/00 ; H01L 3/300 ; C30B 2/938 ;
U.S. Cl.
CPC ...
B32B 9/00 ; H01L 3/300 ; C30B 2/938 ;
Abstract
An epitaxial wafer includes a base material made of sapphire-SiC single crystal or the like, a III nitride underfilm including at least Al epitaxially grown on the base material and a GaN film, preferably having a thickness of 50 Å or more, formed on the underfilm. In fabricating III nitride films on the epitaxial wafer, the oxidized surface layer of the GaN film is removed through an etching process, and subsequently, another III nitride film is formed thereon.