The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 16, 2003
Filed:
Oct. 15, 1999
Paul Daniel Dapkus, Fullerton, CA (US);
E20 Communications, Inc., Calabasas, CA (US);
Abstract
A W quantum well structure for active region of semiconductor lasers for long wavelength emission of photons. The energy band lineups in the disclosed heterostructures achieve emission at wavelengths of 1.3 &mgr;m or greater. The W quantum well structure and exemplary materials can be applied to any semiconductor laser including a vertical cavity surface emitting laser (VCSEL). The active region is comprised of one or more sets of triad layers of GaAs N /GaAs Sb /GaAs N to provide the W quantum well structure. The energy band of these materials provides a staggered band alignment which causes electrons and holes to be confined in adjacent layers to one another. Because the wavefunctions associated with these materials tunnel into adjacent layers, optical emission at a longer wavelength is achievable than otherwise available from the energy gaps of the constituent materials alone.