The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 16, 2003
Filed:
Apr. 23, 2002
Richard A. Soref, Newton Centre, MA (US);
Gregory Sun, Wilmington, MA (US);
The United States of America as represented by the Secretary of the Air Force, Washington, DC (US);
Abstract
The first phonon-pumped semiconductor laser. The active region is an unbiased boron-doped Si Ge /Si superlattice with Si Ge buffer layers embedded in a surface-plasmon strip waveguide. Warm and cool heat sinks create a temperature gradient across the waveguide. A heat buffer layer adjacent to the cool sink reflects optical phonons and transmits acoustic phonons. Within the resonator, the difference in effective temperatures of optical and acoustic phonons provides hole pumping for the lasing transition between the heavy-hole (HH ) and heavy-hole (HH ) minibands. A gain of 280/cm at the 5THz emission frequency is predicted for 6×10 /cm doping at temperatures of 300K and 77K for optical and acoustic phonons, respectively.