The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 16, 2003
Filed:
Aug. 27, 2002
Applicant:
Inventor:
Craig S. Lage, Austin, TX (US);
Assignee:
Motorola, Inc., Schaumburg, IL (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 1/100 ; G11C 1/114 ; G11C 1/115 ;
U.S. Cl.
CPC ...
G11C 1/100 ; G11C 1/114 ; G11C 1/115 ;
Abstract
A magnetic random access memory (MRAM) device is formed having a fixed magnetic layer, a free magnetic layer and a first dielectric layer between them in a recess. A metal plug and an optional second dielectric layer are also formed in the recess. The metal plug serves as a write path. A word line in the MRAM cell is the gate electrode of a transistor used to both write and read the MRAM device. To write the device a current travels in a substantially vertical direction and therefore only affects one MRAM cell, thereby not affecting adjacent cells. Data storage is thereby improved.