The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 16, 2003

Filed:

Sep. 18, 2001
Applicant:
Inventors:

Michael J. Hart, Palo Alto, CA (US);

Steven P. Young, Boulder, CO (US);

Daniel Gitlin, Palo Alto, CA (US);

Hua Shen, San Jose, CA (US);

Stephen M. Trimberger, San Jose, CA (US);

Assignee:

Xilinx, Inc., San Jose, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H03K 3/01 ;
U.S. Cl.
CPC ...
H03K 3/01 ;
Abstract

Structures and methods for selectively applying a well bias to only those portions of a PLD where such a bias is necessary or desirable, e.g., applying a positive well bias to transistors on critical paths within a user's design. A substrate for an integrated circuit includes a plurality of wells, each of which can be independently and programmably biased with the same or a different well bias voltage. In one embodiment, FPGA implementation software automatically determines the critical paths and generates a configuration bitstream that enables positive well biasing only for the transistors participating in the critical paths, or only for programmable logic elements (e.g., CLBs or lookup tables) containing those transistors. In another embodiment, negative well biasing is selectively applied to reduce leakage current.


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