The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 16, 2003
Filed:
Mar. 20, 2000
Teruhiko Kuramachi, Kaisei-machi, JP;
Fuji Photo Film Co., Ltd., Kanagawa-Ken, JP;
Abstract
On a heat sink having a low thermal resistance, an Ni thin film layer is formed at a film thickness of 2 &mgr;m to 6 &mgr;m. On the face to which a semiconductor light emitting element is to be bonded and the face on the side from which light is to be emitted, a barrier metallic layer is formed at a film thickness of 50 nm to 150 nm in the region as wide as four times the area of the bonding face of the semiconductor light emitting element. A wettability improving metallic layer is formed at a film thickness of 50 nm to 150 nm. The semiconductor light emitting element stacks layers of AlGaAs, GaAs, GaAsP, and InGaAs, all on a GaAs substrate. An N electrode includes AuGe/Ni/Au , and a P electrode includes Au/Pt/Ti/Pt/Ti and is pressed and soldered against the bonding face of the heat sink.