The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 16, 2003
Filed:
Jul. 22, 2002
Yasuichi Masuda, Tokyo, JP;
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
An isolating insulation film and a P type active region defined by the isolating insulation film are formed on a semiconductor substrate. Then, an access transistor gate electrode, driver transistor gate electrodes, and a dummy gate electrode are formed. The dummy gate electrode is formed to cover part of the active region within a region into which an N type dopant is to be implanted to form N source/drain regions. As a result, N source/drain regions are not formed under the dummy gate electrode, and the N source/drain regions are reduced in width. This reduces the conductance of access transistors, that is, improves a conductance ratio between the driver and access transistors.