The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 16, 2003
Filed:
Nov. 26, 2001
Bantval Jayant Baliga, Raleigh, NC (US);
Silicon Semiconductor Corporation, Research Triangle Park, NC (US);
Abstract
Vertical MOSFETs include a semiconductor substrate having a plurality of semiconductor mesas therein that are separated by a plurality of deep stripe-shaped trenches. These stripe-shaped trenches extend in parallel and lengthwise across the substrate in a first direction. A plurality of buried insulated source electrodes are formed in the in the plurality of deep stripe-shaped trenches. A plurality of insulated gate electrodes are also provided that extend in parallel across the plurality of semiconductor mesas and into shallow trenches defined within the plurality of buried insulated source electrodes. A surface source electrode is provided on the substrate. The surface source electrode is electrically connected to each of the buried source electrodes at multiple locations along the length of each buried source electrode and these multiple connections decrease the effective source electrode resistance and enhance device switching speed.