The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 16, 2003
Filed:
Oct. 24, 2002
Applicant:
Inventor:
Ho-Ik Hwang, Seoul, KR;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/7108 ; H01L 2/18242 ;
U.S. Cl.
CPC ...
H01L 2/7108 ; H01L 2/18242 ;
Abstract
A capacitor structure includes a device isolation layer pattern formed at a predetermined region of a semiconductor substrate to define an active region; an upper electrode disposed over an upper center of the active region to expose an edge of the active region; a lower electrode region formed in the active region under the upper electrode; and a lightly doped region overlapping with an outer edge of the lower electrode region. In this manner, the resulting breakdown voltage of the device can be increased.