The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 16, 2003

Filed:

Oct. 29, 2001
Applicant:
Inventors:

Takeshi Kyoda, Yokaichi, JP;

Shin Sugawara, Yokaichi, JP;

Hisao Arimune, Yokaichi, JP;

Nobuyuki Kitahara, Yokaichi, JP;

Assignee:

Kyocera Corporation, Kyoto, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 3/10352 ; H01L 3/104 ;
U.S. Cl.
CPC ...
H01L 3/10352 ; H01L 3/104 ;
Abstract

In a photoelectric conversion device having numerous crystalline semiconductor grains deposited on a substrate, the substrate includes an aluminum layer or an aluminum alloy layer, an intermediate layer, and a base material layer, in which the intermediate layer is arranged such that it is composed mainly of one or a plurality of elements selected from among nickel, titanium, chromium, and cobalt. With the constitution as above, it is possible to suppress reaction between the aluminum electrode layer and the base material layer, thereby maintaining the high adhesiveness of the aluminum electrode layer. A photoelectric conversion device with high reliability and high conversion efficiency is therefore realized.


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