The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 16, 2003
Filed:
Mar. 31, 2000
Paul Stephen Andry, Mohegan Lake, NY (US);
Evan George Colgan, Chestnut Ridge, NY (US);
John C. Flake, Mohegan Lake, NY (US);
Peter Fryer, Yorktown Heights, NY (US);
William Graham, Irvington, NY (US);
Eugene O'Sullivan, Nyack, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A method for forming ohmic contacts for semiconductor devices, in accordance with the present invention, includes forming a layer containing metal which includes dopants integrally formed therein. The layer containing metal is patterned to form components for a semiconductor device, and a semiconductor layer is deposited for contacting the layer containing metal. The semiconductor device is annealed to outdiffuse dopants from the layer containing metal into the semiconductor layer to form ohmic contacts therebetween.