The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 16, 2003
Filed:
Nov. 12, 2001
Liji Huang, San Jose, CA (US);
Naiqian Han, Cupertino, CA (US);
Yahong Yao, Cupertino, CA (US);
Gaofeng Wang, Sunnyvale, CA (US);
INTPAX, Inc., Cupertino, CA (US);
Abstract
The present invention discloses an electro-optical device support on a substrate. The electro-optical device includes a sacrificial layer disposed on the substrate having a chamber-wall region surrounding and defining an optical chamber. The electro-optical device further includes a membrane layer disposed on top of the sacrificial layer having a chamber-removal opening surrounding and defining an electric tunable membrane for transmitting an optical signal therethrough. The electrically tunable membrane disposed on top of the optical chamber surrounded by the chamber wall regions. The chamber-wall region is doped with ion-dopants for maintaining the chamber-wall region for removal-resistance under a chamber-forming process performed through the chamber-removal opening. In a preferred embodiment, the chamber-wall region is a doped silicon dioxide region with carbon or nitrogen. In another preferred embodiment, the chamber-wall region is a nitrogen ion-doped SiNxOy region. In another preferred embodiment, the optical chamber is an etched chamber formed by etching through the chamber removal opening for etching off an etch-enhanced region surrounded by an etch-resistant region constituting the chamber wall.