The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 16, 2003
Filed:
Nov. 28, 2000
Applicant:
Inventor:
Hong Goo Choi, Seoul, KR;
Assignee:
Hynix Semiconductor, Kyoungki-do, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/120 ; H01L 2/104 ;
U.S. Cl.
CPC ...
H01L 2/120 ; H01L 2/104 ;
Abstract
A semiconductor device and method for fabricating a semiconductor device yields improved doping efficiency and increased capacitance. The method includes forming a silicon film on a substrate. HSG having a spherical projection forms on a surface of the silicon film. The surface of the silicon film having the HSG is washed, and a lower electrode forms by a doping process. A dielectric film and an upper electrode are sequentially formed on the silicon film without washing.