The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 16, 2003
Filed:
Sep. 28, 2001
Arnd Scholz, Poughkeepsie, NY (US);
Prakash C. Dev, Plano, TX (US);
Infineon Technologies North America Corp., San Jose, CA (US);
Abstract
A method is provided for forming an inside nitride spacer in a deep trench device DRAM cell. The method includes depositing an oxide liner in a trench etched from a semiconductor material, wherein the oxide lines abuts a pad nitride layer, a pad oxide layer under the pad nitride layer, and a recessed gate poly in the trench. The method further includes depositing a spacer material on the oxide liner, removing exposed portions of the oxide layer from the semiconductor, and depositing a poly stud material over the semiconductor wherein the spacer material is encapsulated in poly stud material. The method includes polishing the semiconductor to the top trench oxide layer, and etching the top trench oxide layer.