The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 16, 2003
Filed:
Dec. 28, 2001
Jum Soo Kim, Kyungki-Do, KR;
Sung Mun Jung, Kyungki-Do, KR;
Sang Bum Lee, Chungcheongbuk-Do, KR;
Min Kuck Cho, Kyungki-Do, KR;
Young Bok Lee, Kyungki-Do, KR;
Hynix Semiconductor Inc., Kyungki-Do, KR;
Abstract
The present invention relates to a method of manufacturing a nonvolatile memory cell. The present invention uses tungsten (W) as an upper layer of a control gate electrode in order to integrate the memory cell and performs an ion implantation process for forming a source region and a drain region before a selective oxidization process that is performed to prevent abnormal oxidization of tungsten (W). Therefore, the present invention can reduce a RC delay time of word lines depending on integration of the memory cell and also secure a given distance between a silicon substrate and a tunnel oxide film. As a result, the present invention can solve a data retention problem of the flash memory.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile