The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 16, 2003
Filed:
Jun. 17, 2002
Takashi Yamaguchi, Kanagawa, JP;
Toshimasa Kobayashi, Kanagawa, JP;
Satoru Kijima, Miyagi, JP;
Takashi Kobayashi, Kanagawa, JP;
Tsunenori Asatsuma, Kanagawa, JP;
Takeharu Asano, Kanagawa, JP;
Tomonori Hino, Miyagi, JP;
Sony Corporation, Tokyo, JP;
Abstract
A GaN compound semiconductor laser includes an AlGaN buried layer which buries opposite sides of a ridge stripe portion formed on a p-type AlGaN cladding layer. The AlGaN buried layer is made by first patterning an upper part of the p-type AlGaN cladding layer and a p-type GaN contact layer into a ridge stripe configuration by using a SiO film as an etching mask, then growing the AlGaN buried layer non-selectively on the entire substrate surface to bury both sides of the ridge stripe portion under the existence of the SiO film on the ridge stripe portion, and thereafter selectively removing the AlGaN buried layer from above the ridge stripe portion by etching using the SiO film as an etching stop layer. Thus, the GaN compound semiconductor laser is stabilized in the transverse mode, intensified in output power, and improved in lifetime.