The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 16, 2003

Filed:

Jun. 05, 2001
Applicant:
Inventors:

Nam-Hun Kim, Cupertino, CA (US);

Jeffrey D. Chinn, Foster City, CA (US);

Assignee:

Applied Materials, Inc, Santa Clara, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G06F 7/36 ; H01L 2/1311 ;
U.S. Cl.
CPC ...
G06F 7/36 ; H01L 2/1311 ;
Abstract

The present invention pertains to a method for depositing built-up structures on the surface of patterned masking material used for semiconductor device fabrication. Such built-up structures are useful in achieving critical dimensions in the fabricated device. The composition of the built-up structure to be fabricated is dependant upon the plasma etchants used during etching of underlying substrates and on the composition of the substrate material directly underlying the masking material. One preferred method of the present invention for depositing built-up structures upon a patterned mask surface comprises the following steps: (a) providing a patterned mask surface, wherein said patterned mask rests on an underlying substrate; and (b) depositing a polymeric built-up structure over at least a portion of said patterned mask surface using a plasma formed from a source gas comprising Cl , a compound which comprises fluorine, and an inert gas which provides physical bombardment of surfaces contacted by said plasma.


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