The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 16, 2003
Filed:
Mar. 08, 2001
John George Maltabes, Austin, TX (US);
Alain Bernard Charles, Singapore, SG;
Karl Emerson Mautz, Round Rock, TX (US);
Motorola, Inc., Schaumburg, IL (US);
Abstract
A semiconductor device on a wafer is formed by lithography with the following steps of: coating ( ) a lithography resist onto said wafer in a coating means ( ), exposing ( ) said wafer to an irradiation through a reticle in an exposure tool ( ), stabilizing ( ) said lithography resist for activating chemical reaction and developing said lithography resist in said predetermined areas in a developer means ( ) so as to reveal a predetermined lithography resist pattern on the wafer surface, stabilizing ( ) the lithography resist in a stabilization means ( ) for strengthening said pattern on the wafer surface, performing ( ) a metrology inspection of said lithography resist pattern on said wafer surface in a metrology tool ( ), etching, wet processing or implanting ions ( ) into said wafer in a processing cell ( ), wherein said metrology inspection is performed by atomic force microscopy in a atomic force microscopy module ( ) immediately after developing and baking said lithography resist adjacent to said stabilization means ( ).