The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 09, 2003
Filed:
Apr. 30, 2001
Vahid Vahedi, Albany, CA (US);
Stanley Siu, Castro Valley, CA (US);
Lam Research Corporation, Fremont, CA (US);
Abstract
A method scales plasma process settings from a first processing device to a second processing device. The first processing device has a first geometry and a first set of process parameters. The second processing device has a second geometry and a second set of process parameters. A first set of plasma process settings that generates the first set of process parameters of the first processing device having the first geometry is determined. The first set of plasma process settings is reduced to isolate at least one variable on which the first set of plasma process settings depends on for each plasma process setting. A scaling factor is calculated for each plasma process setting from the first set of plasma process settings such that the first set of process parameters substantially equals the second set of process parameters. A second set of process settings is determined for the second processing device having the second geometry by multiplying each scaling factor with each plasma process setting from the first processing device having the first geometry.