The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 6618290 B1

PDF
Full Text
Expired
Date of Patent:
Sep. 09, 2003

Filed:

Jun. 13, 2001
Applicant:
Inventors:

Janet S. Y. Wang, San Francisco, CA (US);

Narbeh Derhacobian, Belmont, CA (US);

Assignee:

Advanced Micro Devices, Inc., Sunnyvale, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 1/604 ;
U.S. Cl.
CPC ...
G11C 1/604 ;
Abstract

A method of programming that includes programming a fresh memory cell with a substrate that includes a first region and a second region with a channel therebetween and a gate above the channel, and a charge trapping region that contains a first amount of charge. Baking the programmed fresh cell causing a charge loss in the channel while the remaining charge within the channel is distributed more locally at the first region when compared to the distribution of charge prior to the baking.


Find Patent Forward Citations

Wang, Janet S. Y.. (2003). Method of programming a non-volatile memory cell using a baking process (U.S. Patent No. 6618290). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6618290

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