The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 09, 2003
Filed:
Apr. 19, 2001
Samsung Electro-Mechanics Co., Ltd., Kyungki-Do, KR;
Abstract
The present invention provides a robust FBAR device and a simplified method of fabricating a FBAR device. FBAR device according to the present invention includes a membrane supporting layer between a substrate and a membrane layer, surrounding an air gap region. The membrane supporting layer supports the membrane layer to obtain a robust structure. Firstly, the method forms a sacrificial layer on the substrate, then a photoresist pattern is formed on air gap forming region at a top surface of the sacrificial layer, the method removes the sacrificial layer to form a sacrificial pattern by using the photoresist pattern as an etching mask. An insulating material then deposits on the substrate, the photoresist pattern is remove, and a membrane layer is formed on a top surface of the sacrificial layer and the insulating material layer. Finally, the method removes the sacrificial pattern to form an air gap.