The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 09, 2003
Filed:
Mar. 21, 2002
Applicant:
Inventor:
Masaaki Noda, Otsu, JP;
Assignee:
Matsushita Electric Industrial Co., Ltd., Osaka, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/994 ; H01L 3/1062 ;
U.S. Cl.
CPC ...
H01L 2/994 ; H01L 3/1062 ;
Abstract
A high breakdown voltage semiconductor device includes a semiconductor layer, a drain offset diffusion region, a source diffusion region, a drain diffusion region, a buried diffusion region of a first conductivity type that is buried in the drain offset diffusion region, at least one plate electrode in a floating state formed on a field insulating film, and a metal electrode that is formed on an interlayer insulating film positioned on the plate electrode and a part of which is electrically connected to the drain diffusion region and that is capacitively coupled to the plate electrode.