The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 09, 2003
Filed:
Jun. 26, 2002
John J. Drab, Santa Barbara, CA (US);
David A. Robinson, Redondo Beach, CA (US);
The United States of America as represented by the Secretary of the Navy, Washington, DC (US);
Abstract
An electrically writeable, optically readable, ferroelectric memory cell for nonvolatilely storing a single bit. The memory cell has an optically polarizeable translucent ferroelectric layer located between first and second translucent metal layers. The metal layers are used to electrically write an optical polarization state into the translucent ferroelectric layer. A translucent insulator layer, wire grid polarizer, a second translucent insulator layer and light sensing diode region are, in turn, attached to the second translucent metal layer. A polarized light beam, from a light source, is shone onto the first translucent metal layer, in order to optically read out the optical polarization state of the translucent ferroelectric layer of the memory cell. Alternately, two such memory cells can be used together in order to store a single bit.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile