The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 09, 2003

Filed:

Oct. 05, 2000
Applicant:
Inventor:

Richard A. Mann, Torrance, CA (US);

Assignee:

Pictos Technologies, Inc., Newport Beach, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/700 ;
U.S. Cl.
CPC ...
H01L 2/700 ;
Abstract

An image sensor having a photo-detector and a reset contact that are electrically connected by a discharge path disposed between the reset contact and the photo-detector. The photo-detector has a depletion region for receiving and collecting radiation charges that are discharged through the discharge path to the reset contact. In one implementation, the reset of the photo-detector to a known potential is achieved by applying a high reset voltage to the reset contact that causes a reset depletion region to form beneath the reset contact. The outer perimeter of the reset depletion region defines a reset junction. The reset junction and the photo-detector junction are of the same polarity. As the high reset voltage is increased at the reset junction, the reset depletion region merges via punch through with the photo-detector's depletion region to create the discharge path. The voltage on the reset contact is increased beyond the expected potential of the photo-detector so that a potential difference is established across the discharge path and charges are swept away from the photo-detector via the discharge path. At the end of the reset, the potential on the reset junction is reduced and the depletion regions separate and the photo detector is left with a fixed potential. In this manner the kTC noise associated with the reset through a MOSFET switch is eliminated as the charge is transferred through the merging of two depletion areas.


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