The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 09, 2003
Filed:
May. 24, 2002
Rotating arc plasma jet and method of use for chemical synthesis and chemical by-products abatements
Imad Mahawili, Grand Rapids, MI (US);
Other;
Abstract
An apparatus for chemical synthesis or chemical abatement is disclosed which includes a processing chamber and a secondary chamber which is in communication with the processing chamber. The processing chamber is configured to generate an arc in the processing chamber. A magnetic field generator, such as an energized coil or permanent magnet, generates a magnetic field in the processing chamber, which induces the arc generated in the processing chamber to rotate. The apparatus further includes at least one injection port for introducing at least one waste medium into the processing chamber and into the rotating arc whereby the rotating arc transforms the waste medium into a plasma resulting in a disassociation of the chemical constituents comprising the waste medium which thereafter flow into the secondary chamber. The secondary chamber is configured to quench the plasma products when the plasma is in the secondary chamber to maintain the disassociation and thereby reduce the reactivity of the chemical constituents thereby abating the waste medium. In other aspects, two or more mediums are introduced into the rotating arc which transforms the mediums into plasma thereby raising the energy of the mediums which causes the plasma products to become associated to thereby form a desired compound. In this aspect, the secondary chamber is configured to quench the associated plasma products when the plasma products are in the secondary chamber to maintain the association and thereby synthesize the desired compound.