The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 09, 2003
Filed:
Apr. 12, 2001
Applicant:
Inventors:
Annabel Susan Nickles, Palo Alto, CA (US);
Ravi Rajagopalan, Sunnyvale, CA (US);
Pravin Narwankar, Sunnyvale, CA (US);
Assignee:
Applied Materials, Inc., Santa Clara, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/131 ; H01L 2/1469 ; H01L 2/18242 ;
U.S. Cl.
CPC ...
H01L 2/131 ; H01L 2/1469 ; H01L 2/18242 ;
Abstract
A process for forming high k dielectric thin films on a substrate, e.g., silicon, by 1) low temperature (500° C. or less) deposition of a dielectric material onto a surface, followed by 2) high temperature post-deposition annealing. The deposition can take place in an oxidative environment, followed by annealing, or alternatively the deposition can take place in a non-oxidative environment (e.g., N ), followed by oxidation and annealing.