The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 09, 2003
Filed:
Sep. 13, 2001
Atsushi Nishizawa, Tokyo, JP;
NEC Corporation, Tokyo, JP;
Abstract
A dry etching method, with a gas containing nitrogen added to an etching gas containing a halogen compound for an SiC film, applies a low dielectric constant film to an interlayer insulating film and reduces parasitic capacitance between groove wirings. In manufacturing of a multilayer wiring structure, an SiC layer and an interlayer insulating film are laminated on a lower layer wiring, and a via hole that reaches the surface of the SiC layer and a wiring groove is formed by dry-etching a region of the interlayer insulating film. The exposed SiC layer is then removed by dry etching, using the interlayer insulating film as an etching mask, and the via hole penetrates the SiC layer to the surface of the lower layer wiring. The penetrating via hole and the wiring groove are filled with a conductive material to form a groove wiring connecting with the lower layer wiring.