The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 09, 2003
Filed:
Aug. 22, 2002
James E. Boyle, Saratoga, CA (US);
Robert L. Davis, Belmont, CA (US);
Laurence D. Delaney, Whitefish, MT (US);
Raanan Y. Zehavi, Sunnyvale, CA (US);
Integrated Materials, Inc., San Jose, CA (US);
Abstract
A method of fabricating parts of silicon, preferably virgin polysilicon formed by chemical vapor deposition of silane, and assembling them into a complex structure, such as a silicon tower or boat for removably supporting a plurality of silicon wafers during thermal processing. The virgin polysilicon is annealed to above 1025° C. before it is machined into a predetermined shape. After machining, the silicon parts are annealed in an oxygen ambient. The machined parts are then assembled and joined together followed by another anneal of the assembled structure. A preferred embodiment of the tower includes four legs secured on their ends to two bases. A plurality of slots are cut in the legs allowing slidable insertion of the wafers and support for them. The bases may be either virgin poly or monocrystalline silicon and be either integral or composed of multiple parts.