The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 09, 2003
Filed:
Feb. 21, 2002
Applicant:
Inventors:
Martin Clive Wilson, Cricklade, GB;
Simon Lloyd Thomas, Swindon, GB;
Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/176 ;
U.S. Cl.
CPC ...
H01L 2/176 ;
Abstract
A method of forming an electrical isolation trench in a silicon-on-insulator (SOI) structure. The method comprises forming a first oxide layer on top of the upper silicon layer of the SOI structure, forming a polysilicon layer on top of said oxide layer, forming a second oxide layer on top of said polysilicon layer, patterning the first oxide layer, polysilicon layer, and second oxide layer to provide an etch mask, etching the upper silicon layer of the SOI structure to form said trench, and removing said second oxide layer and said polysilicon layer.