The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 09, 2003
Filed:
Aug. 17, 2001
Applicant:
Inventor:
Mukul Saran, Richardson, TX (US);
Assignee:
Texas Instruments Incorporated, Dallas, TX (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 4/8242 ;
U.S. Cl.
CPC ...
H01L 4/8242 ;
Abstract
The invention describes a high capacitance damascene capacitor. A etch-stop/capacitor dielectric layer is sandwiched between two conductive plates and to form an integrated circuit capacitor. One metal plate is copper formed using a damascene process. The high capacitance of the structure is due to the thin high k dielectric material used to form the etch-stop/capacitor dielectric layer